The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Nov. 02, 2001
Mark P. D'evelyn, Niskayuna, NY (US);
David C. Pender, Schenectady, NY (US);
Suresh S. Vagarali, Columbus, OH (US);
Dong-sil Park, Niskayuna, NY (US);
Mark P. D'Evelyn, Niskayuna, NY (US);
David C. Pender, Schenectady, NY (US);
Suresh S. Vagarali, Columbus, OH (US);
Dong-Sil Park, Niskayuna, NY (US);
General Electric Company, Pittsfield, MA (US);
Abstract
Polycrystalline gallium nitride (GaN) characterized by having the atomic fraction of gallium ranging from between about 49% to 55%, an apparent density of between about 5.5 and 6.1 g/cm, and a Vickers hardness of above about 1 GPa. Polycrystalline GaN can be made by hot isostatic pressing (HIPing) at a temperature ranging from about 1150° C. to 1300° C. and a pressure ranging from between about 1 and 10 Kbar. Alternatively, polycrystalline GaN can be made by high pressure/high temperature (HP/HT) sintering at a temperature ranging from about 1200° to 1800° C. and a pressure ranging from about 5 to 80 Kbar.