The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2005

Filed:

Sep. 20, 2002
Applicant:

Kinya Ashikaga, Tokyo, JP;

Inventor:

Kinya Ashikaga, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C011/22 ;
U.S. Cl.
CPC ...
Abstract

A ferroelectric memory reads data from a memory cell by using a sense amplifier to compare a reference potential with a potential produced on a bit line by the memory cell. The reference potential may generated by a pre-charge circuit connected to the sense amplifier. Alternatively, the reference potential may be generated by the memory cell itself. In either case, the reference potential is obtained without the need for a reference cell, and without the need to drive a bit line to the reference potential. Current consumption is accordingly reduced, and integration density can be increased.


Find Patent Forward Citations

Ashikaga, Kinya. (2005). Ferroelectric memory and method of operating same (U.S. Patent No. 6859380). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6859380

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…