The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Nov. 20, 2003
Kenji Toyoda, Osaka, JP;
Takashi Ohtsuka, Toyonaka, JP;
Kenji Toyoda, Osaka, JP;
Takashi Ohtsuka, Toyonaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A ferroelectric gate device which comprises a ferroelectric capacitor (), a switching element () serving as a resistor of a capacitor depending on the voltage applied, and a field-effect transistor () having a source, a drain and a gate, said ferroelectric capacitor () having an input terminal (IN) at one end, the other end of said ferroelectric capacitor () being connected to one end of said switching element (), the other end of said switching element () being connected to the gate of said field-effect transistor (), by applying a voltage to said input terminal, said switching element () serving as a resistor when a voltage higher than the coercive voltage (Vc) of a ferroelectric substance which said ferroelectric capacitor (), and by applying a voltage to said input terminal, said switching element () serving as a capacitor when a voltage lower than the coercive voltage (Vc) of said ferroelectric substance is applied to said ferroelectric capacitor ().