The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Nov. 29, 2002
Marie-claire Cyrille, San Jose, CA (US);
Frederick H. Dill, South Salem, NY (US);
Cherngye Hwang, San Jose, CA (US);
Jui-lung LI, San Jose, CA (US);
Marie-Claire Cyrille, San Jose, CA (US);
Frederick H. Dill, South Salem, NY (US);
Cherngye Hwang, San Jose, CA (US);
Jui-Lung Li, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method and structure for a microelectronic device comprises a first film over a substrate, a first polish resistant layer over the first film, a second film over the first polish resistant layer, a second polish resistant layer over the second film, wherein the first and second polish resistant layers comprise diamond-like carbon. The first film comprises an electrically resistive material, while the second film comprises low resistance conductive material. The first film is an electrical resistor embodied as a magnetic read sensor. The electrically resistive material is sensitive to magnetic fields. The device further comprises a generally vertical junction between the first and second films and a dielectric film abutted to the electrically resistive material.