The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Nov. 22, 2002
Amit Lal, Ithaca, NY (US);
Max G. Lagally, Madison, WI (US);
Chung Hoon Lee, Ithaca, NY (US);
Paul Powell Rugheimer, Madison, WI (US);
Amit Lal, Ithaca, NY (US);
Max G. Lagally, Madison, WI (US);
Chung Hoon Lee, Ithaca, NY (US);
Paul Powell Rugheimer, Madison, WI (US);
Wisconsin Alumni Research Foundation, Madison, WI (US);
Abstract
A suspended semiconductor film is anchored to a substrate at at least two opposed anchor positions, and film segments are deposited on the semiconductor film adjacent to one or more of the anchor positions to apply either tensile or compressive stress to the semiconductor film between the film segments. A crystalline silicon film may be anchored to the substrate and have tensile stress applied thereto to reduce the lattice mismatch between the silicon and a silicon-germanium layer deposited onto the silicon film. By controlling the level of stress in the silicon film, the size, density and distribution of quantum dots formed in a high germanium content silicon-germanium film deposited on the silicon film can be controlled.