The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Dec. 10, 2001
Neil Thomson Gordon, Malvern, GB;
Anthony Michael White, Malvern, GB;
Charles Thomas Elliott, Malvern, GB;
Neil Thomson Gordon, Malvern, GB;
Anthony Michael White, Malvern, GB;
Charles Thomas Elliott, Malvern, GB;
QinetiQ Limited, Hants, GB;
Abstract
A multi-layer semiconductor diode having a layer of wide bandgap material located between the active layer and a first contact zone, where the active layer and additional wide bandgap layer are of one dopant type, and the first contact zone is of the opposite dopant type. A specific embodiment of the invention comprises a stack formed from a first contact zone () of p-type material, a lightly doped p-type active layer (), an additionallayer () and a second contact zone () of n-type material. The diode may be used as an infrared detector or a negative luminescent source.