The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Dec. 15, 1995
Masanori Miyagi, Chiba, JP;
Masanori Miyagi, Chiba, JP;
Seiko Instruments Inc., Chiba, JP;
Abstract
A MOS semiconductor device is manufactured by providing a gate electrode on a semiconductor substrate through a silicon oxide film and disposing a resist mask pattern in contact with the silicon oxide film. The resist mask pattern has a fully opened region and a partially opened region disposed between the fully opened region and the gate electrode. The partially opened region has alternating masked portions and portions exposing the silicon oxide film which partly block and partly permit, respectively, the introduction of impurities therethrough. Impurities are selectively introduced into an impurity introduction region of the semiconductor substrate through the fully opened region and the partially opened region of the resist mask pattern to form areas having high and low impurity densities in the impurity introduction region.