The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Mar. 28, 2001
Applicants:
Yoshihiro Morimoto, Inazawa, JP;
Kiyoshi Yoneda, Gifu, JP;
Inventors:
Yoshihiro Morimoto, Inazawa, JP;
Kiyoshi Yoneda, Gifu, JP;
Assignee:
Sanyo Electric Co., Ltd., , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01I021/20 ;
U.S. Cl.
CPC ...
Abstract
An a-Si film () formed on an insulating substrate () is irradiated with a laser so that the a-Si film () is fused and recrystallized to form a p-Si film (). Projections () generated on the p-Si film () at this stage are eliminated by irradiation of ion beams at the incident angle of 60° to 90° using an ion milling method to planarize the surface of the p-Si film (), thereby creating sufficient insulation between the p-Si film () and gate electrodes ().