The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Dec. 15, 2000
Sylvain Delage, Orsay, FR;
Simone Cassette, Limours, FR;
Didier Floriot, Montigny le Bretonneux, FR;
Arnaud Girardot, Toulouse, FR;
Sylvain Delage, Orsay, FR;
Simone Cassette, Limours, FR;
Didier Floriot, Montigny le Bretonneux, FR;
Arnaud Girardot, Toulouse, FR;
Thales, Paris, FR;
Abstract
A collector-up heterojunction bipolar transistor including, stacked on a substrate, an emitter layer, a base layer, and a collector layer. In this transistor the surface area of the base-emitter junction is of smaller dimensions than the surface area of the base-collector junction. Further, the material of the base layer exhibits a sensitivity of the electrical conductivity to ion implantation that is lower than the sensitivity of the electrical conductivity of the material of the emitter layer to the same ion implantation.