The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2005

Filed:

May. 24, 2002
Applicants:

Michael A. Guillom, Knoxville, TN (US);

Michael L. Simpson, Knoxville, TN (US);

Vladimir I. Merkulov, Knoxville, TN (US);

Anatoli V. Melechko, Knoxville, TN (US);

Douglas H. Lowndes, Knoxville, TN (US);

Inventors:

Michael A. Guillom, Knoxville, TN (US);

Michael L. Simpson, Knoxville, TN (US);

Vladimir I. Merkulov, Knoxville, TN (US);

Anatoli V. Melechko, Knoxville, TN (US);

Douglas H. Lowndes, Knoxville, TN (US);

Assignee:

UT-Battelle, LLC, Oak Ridge, TN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/00 ;
U.S. Cl.
CPC ...
Abstract

Gated field emission devices and systems and methods for their fabrication are described. A method includes growing a substantially vertically aligned carbon nanostructure, the substantially vertically aligned carbon nanostructure coupled to a substrate; covering at least a portion of the substantially vertically aligned carbon nanostructure with a dielectric; forming a gate, the gate coupled to the dielectric; and releasing the substantially vertically aligned carbon nanostructure by forming an aperture in the gate and removing a portion of the dielectric.


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