The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Jun. 05, 2002
Applicant:
Kenji Okada, Toyonaka, JP;
Inventor:
Kenji Okada, Toyonaka, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/66 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor device evaluation method includes the steps of measuring a total injected electron quantity before an insulating film causes a dielectric breakdown and obtaining the ratio between the total injected electron quantity and a total injected electron quantity before retention degradation is caused. In this method, using the ratio and the total injected electron quantity, the total injected electron quantity before the retention degradation is caused is calculated.