The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Mar. 08, 2002
Takaharu Kondo, Kyoto, JP;
Shotaro Okabe, Nara, JP;
Masafumi Sano, Kyoto, JP;
Akira Sakai, Kyoto, JP;
Ryo Hayashi, Nara, JP;
Shuichiro Sugiyama, Kyoto, JP;
Takaharu Kondo, Kyoto, JP;
Shotaro Okabe, Nara, JP;
Masafumi Sano, Kyoto, JP;
Akira Sakai, Kyoto, JP;
Ryo Hayashi, Nara, JP;
Shuichiro Sugiyama, Kyoto, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
The invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal. The microcrystal is located in at least one interface region of the silicon-based film containing the microcrystal and has no orientation property. Further, the invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal, and the orientation property of the microcrystal changing in a film thickness direction of the silicon-based film containing the microcrystal. Thereby, a silicon-based film having a shortened tact time, an increased film forming rate, and excellent characteristics, and a semiconductor element including this silicon-based film having excellent adhesion and environmental resistance can be obtained.