The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Nov. 12, 2002
Hong-woo Lee, Gumi-shi, KR;
Joon-young Choi, Chilgok-gun, KR;
Hyon-jong Cho, Bucheon-shi, KR;
Hak-do Yoo, Seoul, KR;
Hong-Woo Lee, Gumi-shi, KR;
Joon-Young Choi, Chilgok-gun, KR;
Hyon-Jong Cho, Bucheon-shi, KR;
Hak-Do Yoo, Seoul, KR;
Siltron Inc., Gumi-shi, KR;
Abstract
The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.