The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2005

Filed:

Dec. 13, 2001
Applicant:

Daisuke Inomata, Tokyo, JP;

Inventor:

Daisuke Inomata, Tokyo, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01G007/00 ;
U.S. Cl.
CPC ...
Abstract

According to the present invention, a method of manufacturing a ferroelectric capacitor using a ferroelectric thin film, includes steps of: forming a lower conductive layer on a semiconductor substrate; coating solution of ferroelectric coking including organic solvent and organometallic complex on the lower conductive layer; performing a heating process for coated solution at temperature, to decompose said organometallic complex in solution of ferroelectric coking, or more and ferroelectric crystallization temperature or below to form said metal compound thin film; forming an upper conductive layer on said metal compound thin film; and performing a heating process for said metal compound thin film at ferroelectric crystallization temperature or more to form said ferroelectric thin film.


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