The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
May. 29, 2003
Thomas A. Somerville, Tempe, AZ (US);
Thomas A. Somerville, Tempe, AZ (US);
Standard Microsystems Corporation, Hauppauge, NY (US);
Abstract
A bandgap voltage reference generator may include a BJT (Bipolar Junction Transistor) and a pair of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) coupled to the BJT. The base-emitter voltage Vbe of the BJT may exhibit a non-linearity with respect to temperature. The difference between gate-source voltages of the pair of MOSFETs exhibits an opposite non-linearity with respect to temperature. The opposite non-linearity reduces the effect of the non-linearity on the output voltage of the bandgap voltage reference generator. The difference in gate-source voltages of the pair of MOSFETs may be determined by the ratio of channel width to channel length of each MOSFET included in the pair of MOSFETs.