The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Mar. 04, 2003
Applicant:
Yoshitaka Hokomoto, Kanagawa, JP;
Inventor:
Yoshitaka Hokomoto, Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L027/095 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor device comprises a field effect transistor and a schottky-barrier diode mounted in the same semiconductor substrate, the semiconductor device having buried doped layers buried at a predetermined interval in a drift layer of a first conductivity type in a schottky-barrier diode region so as to have a predetermined depth, the buried doped layers having a second conductivity type.
Hokomoto, Yoshitaka. (2005). Semiconductor device (U.S. Patent No. 6855998). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6855998
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile