The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2005

Filed:

Oct. 30, 2003
Applicants:

Zhiqiang Wu, Plano, TX (US);

Shaoping Tang, Plano, TX (US);

Song Zhao, Dallas, TX (US);

Inventors:

Zhiqiang Wu, Plano, TX (US);

Shaoping Tang, Plano, TX (US);

Song Zhao, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/76 ;
U.S. Cl.
CPC ...
Abstract

The present invention employs a no mask, blanket implant of an n-type implant after formation of active regions in NMOS devices. As a result, the implanted n-type dopants counteract portions of strongly p-type HALO or pocket regions creating a smoother dopant profile or transition from a portion of the active regions to the channel. However, the blanket implant is performed at a relatively low energy so as to not significantly alter one or more other portions of the active regions to other portions of the device.


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