The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Nov. 08, 1999
Applicant:
Tomoyoshi Kushida, Seto, JP;
Inventor:
Tomoyoshi Kushida, Seto, JP;
Assignee:
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/76 ; H01L029/94 ; H01L027/095 ; H01L029/861 ; H01L031/062 ;
U.S. Cl.
CPC ...
Abstract
A trench gate type semiconductor device has an ON resistance that has been reduced. The device has a drain electrode on one side of the substrate and has a drift region, channel region, source region, and a source electrode on the other side. The channel region is sandwiched between a trench gate region covered with insulating film. Current passes when a positive bias voltage is applied to the trench region, and current is cut off when a negative bias voltage is applied.