The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Nov. 18, 2002
Sun-young Kim, Kyunggi-do, KR;
Woon-kyung Lee, Kyunggi-do, KR;
Dong-whee Kwon, Kyunggi-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A gate-contact structure and a method for forming the same are provided. The structure includes a device isolation layer pattern formed at a semiconductor substrate to define an active region; and a gate electrode and a capping pattern, which are sequentially stacked on the semiconductor substrate across the device isolation layer pattern. The capping pattern includes a first gate contact hole that exposes a top surface of the gate electrode. An interlayer insulation layer pattern including a second gate contact hole is disposed to cover an entire surface of the semiconductor substrate including the gate electrode and the capping pattern. The second gate contact hole penetrates the first gate contact hole to expose the top surface of the gate electrode. A gate contact plug is disposed to be connected to the top surface of the gate electrode through the second gate contact hole. Accordingly, the interlayer insulation layer pattern is intervened between the gate contact plug and a sidewall of the capping pattern.