The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Jul. 19, 2000
Hong Yong Zhang, Kawasaki, JP;
Hong Yong Zhang, Kawasaki, JP;
Fujitsu Display Technologies Corporation, Kawasaki, JP;
Abstract
The present invention relates to a thin film transistor, a fabrication method thereof and a liquid crystal display having the thin film transistor, and an object of the present invention is to provide a thin film transistor which improves a fabrication yield, a fabrication method thereof and a liquid crystal display having the thin film transistor. In a bottom-gate-type thin film transistorhaving a gate electrodeformed on a substrate, a gate insulating filmformed on the gate electrode, an operational semiconductor filmformed on the gate insulating filmon the gate electrode, a channel protection filmformed on the operational semiconductor film, and a source and a drain electrodesandformed on both sides of the top surface of the channel protection filmconnected to the operational semiconductor film with the operational semiconductor, and the channel protection filmhas a first insulating layercontacting to an upper interface of the operational semiconductor filmand a second insulating layerformed on the first insulating layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile