The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Dec. 18, 2002
David Chow, Newbury Park, CA (US);
Kenneth Elliott, Thousand Oaks, CA (US);
Chanh Nguyen, Calabasas, CA (US);
David Chow, Newbury Park, CA (US);
Kenneth Elliott, Thousand Oaks, CA (US);
Chanh Nguyen, Calabasas, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A heterojunction bipolar transistor is presented, comprising a substrate having formed thereon a heterojunction bipolar transistor layer structure, and including an emitter layer. The emitter layer includes a strained, n-doped compound of indium arsenic and phosphorus. The transistor further comprises, between the substrate and emitter layer, a subcollector layer, a collector layer, a base layer, and an optional spacer layer. The emitter layer may include a graded portion. A contact layer is formed on the emitter layer to provide contacts for the device.