The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Apr. 02, 2003
Patricia A. Beck, Palo Alto, CA (US);
Douglas Ohlberg, Mountain View, CA (US);
Duncan Stewart, Menlo Park, CA (US);
Zhiyong LI, Mountain View, CA (US);
Patricia A. Beck, Palo Alto, CA (US);
Douglas Ohlberg, Mountain View, CA (US);
Duncan Stewart, Menlo Park, CA (US);
Zhiyong Li, Mountain View, CA (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., AlOover the conductive layer.