The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Oct. 24, 2001
Takaharu Kondo, Kyoto, JP;
Masafumi Sano, Kyoto, JP;
Akira Sakai, Kyoto, JP;
Yasuyoshi Takai, Nara, JP;
Ryo Hayashi, Nara, JP;
Toshihiro Yamashita, Kyoto, JP;
Takaharu Kondo, Kyoto, JP;
Masafumi Sano, Kyoto, JP;
Akira Sakai, Kyoto, JP;
Yasuyoshi Takai, Nara, JP;
Ryo Hayashi, Nara, JP;
Toshihiro Yamashita, Kyoto, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
The method of the present invention is a method of forming a silicon-based semiconductor layer by introducing a source gas into a vacuum vessel and forming a silicon-based semiconductor layer containing a microcrystal on a substrate introduced into the vacuum vessel by plasma CVD, which comprises a first step of forming a first region with a source gas containing halogen atoms, and a second step of forming a second region on the first region under a condition where the source gas containing halogen atoms in the second step is lower in gas concentration than that of the first step, thereby providing a method of forming a silicon-based semiconductor layer having an excellent photoelectric characteristic at a film forming rate of an industrially practical level and a photovoltaic element using the silicon-based semiconductor layer formed by the method.