The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Oct. 30, 2002
Richard L. Woodruff, Fort Collins, CO (US);
Scott M. Tyson, Albuquerque, NM (US);
John T. Chaffee, Colorado Springs, CO (US);
David B. Kerwin, Colorado Springs, CO (US);
Richard L. Woodruff, Fort Collins, CO (US);
Scott M. Tyson, Albuquerque, NM (US);
John T. Chaffee, Colorado Springs, CO (US);
David B. Kerwin, Colorado Springs, CO (US);
Aeroflex Colorado Springs, Inc., Colorado Springs, CO (US);
Abstract
A method for manufacturing a radiation hardened semiconductor device, having defined active region and isolation region. The isolation region containing an isolation material and active region containing a transition region between active and isolation region, sometimes denoted a bird's beak region. Wherein the transition region is implanted with germanium and boron, to prevent formation of leakage paths between active devices, or within an active device. The implanted area can be further limited to that area of the transition region that is adapted to be covered by a gate material, such as polysilicon.