The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Nov. 04, 1999
Robert Alan Hamm, Staten Island, NY (US);
Rose Fasano Kopf, Green Brook, NJ (US);
Robert William Ryan, Piscataway, NJ (US);
Alaric Tate, Chatham, NJ (US);
Yu-chi Wang, North Plainfield, NJ (US);
Robert Alan Hamm, Staten Island, NY (US);
Rose Fasano Kopf, Green Brook, NJ (US);
Robert William Ryan, Piscataway, NJ (US);
Alaric Tate, Chatham, NJ (US);
Yu-Chi Wang, North Plainfield, NJ (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
A method of fabricating a III-V heterostructure semiconductor device. The method includes the steps of forming at least one conductive post overlying a semiconductor region to form a structure, encapsulating the structure and the conductive post to form a planarized cured passivation layer, and exposing the conductive post through the planarized cured passivation layer to form the semiconductor device.