The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2005

Filed:

May. 04, 2001
Applicants:

Karl-heinz Müller, Velden, DE;

Konrad Wolf, Otterfing, DE;

Inventors:

Karl-Heinz Müller, Velden, DE;

Konrad Wolf, Otterfing, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/331 ;
U.S. Cl.
CPC ...
Abstract

A method for producing bipolar transistors with the aid of selective epitaxy for producing a collector and base. The method includes widening the area of the base either by the isotropic etching of the conductive layer or by the oxidation of the conductive layer and by the subsequent removal of the oxide layer. This widening of the area of the base prevents the occurrence of short-circuits between the emitter and the collector during the subsequent production of the base.


Find Patent Forward Citations

Müller, Karl-Heinz. (2005). Method for fabricating a bipolar transistor (U.S. Patent No. 6855612). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6855612

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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