The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Jun. 12, 2003
Applicants:
Krishnashree Achuthan, San Ramon, CA (US);
Shibly S. Ahmed, San Jose, CA (US);
Haihong Wang, Milpitas, CA (US);
Bin Yu, Cupertino, CA (US);
Inventors:
Krishnashree Achuthan, San Ramon, CA (US);
Shibly S. Ahmed, San Jose, CA (US);
Haihong Wang, Milpitas, CA (US);
Bin Yu, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a MOSFET type semiconductor device includes planarizing a gate material layer that is deposited over a channel. The planarization is performed in a multi-step process that includes an initial 'rough' planarization and then a 'fine' planarization. The slurry used for the finer planarization may include added material that tends to adhere to low areas of the gate material.