The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6855484 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 15, 2005

Filed:

Feb. 25, 2003
Applicants:

Francimar Campana, Milipitas, CA (US);

Srinivas Nemani, San Jose, CA (US);

Michael Chapin, Fremont, CA (US);

Shankar Venkataraman, Santa Clara, CA (US);

Inventors:

Francimar Campana, Milipitas, CA (US);

Srinivas Nemani, San Jose, CA (US);

Michael Chapin, Fremont, CA (US);

Shankar Venkataraman, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C016/32 ;
U.S. Cl.
CPC ...
Abstract

A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.


Find Patent Forward Citations

Campana, Francimar. (2005). Method of depositing low dielectric constant silicon carbide layers (U.S. Patent No. 6855484). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6855484

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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