The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Dec. 21, 2001
Ghulam Hasnain, Palo Alto, CA (US);
Richard P. Schneider, Mountain View, CA (US);
Scott W. Corzine, Sunnyvale, CA (US);
Mark Hueschen, Palo Alto, CA (US);
Tetsuya Takeuchi, Mountain View, CA (US);
Danny E. Mars, Los Altos, CA (US);
Ghulam Hasnain, Palo Alto, CA (US);
Richard P. Schneider, Mountain View, CA (US);
Scott W. Corzine, Sunnyvale, CA (US);
Mark Hueschen, Palo Alto, CA (US);
Tetsuya Takeuchi, Mountain View, CA (US);
Danny E. Mars, Los Altos, CA (US);
Agilent Technologies, Inc., Palo Alto, CA (US);
Abstract
An optical semiconductor device having an active layer for generating light via the recombination of holes and electrons therein. The active layer is part of a plurality of semiconductor layers including an n-p junction between an n-type layer and a p-type layer. The active layer has a polarization field therein having a field direction that depends on the orientation of the active layer when the active layer is grown. In the present invention, the polarization field in the active layer has an orientation such that the polarization field is directed from the n-layer to the p-layer.