The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Oct. 04, 1996
Applicant:
Hidemi Takasu, Kyoto, JP;
Inventor:
Hidemi Takasu, Kyoto, JP;
Assignee:
Rohm Company, Ltd., Kyoto, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/788 ; H01L029/76 ; H01L029/792 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor nonvolatile memory cell comprised of a p-type silicon well, an ndrainand an nsource, the source and the drain regions defining an channel region. On top of the wellthere are laminated a thin silicon dioxide filmserved as a gate oxide, a polysilicon layerand a SrTiOlayercomprised of a high dielectric substance, in respective order. Further on top of these layers, there is formed a polysilicon layerserved as gate electrode. By using the memory cell and appropriate select transistors, a semiconductor nonvolatile memory device is constructed.