The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Jun. 11, 2002
Hisaki Kato, Aichi-ken, JP;
Hiroshi Watanabe, Aichi-ken, JP;
Norikatsu Koide, Naka-ken, JP;
Shinya Asami, Aichi-ken, JP;
Hisaki Kato, Aichi-ken, JP;
Hiroshi Watanabe, Aichi-ken, JP;
Norikatsu Koide, Naka-ken, JP;
Shinya Asami, Aichi-ken, JP;
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
Abstract
A barrier layer made of AlGaN (0<x≦0.18) is formed in a light-emitting semiconductor device using gallium nitride compound having a multi quantum-well (MQW) structure. By controlling a composition ratio x of aluminum (Al) or thickness of the barrier layer, luminous intensity of the device is improved. An n-cladding layer made of AlGaN (0<x≦0.06) is formed in a light-emitting semiconductor device using gallium nitride compound. By controlling a composition ratio x of aluminum or thickness of the n-cladding layer, luminous intensity of the device is improved. A p-type layer and an n-type layer are formed in a light-emitting semiconductor device using gallium nitride compound having a double-hetero junction structure. By controlling a ratio of a hole concentration of the p-type layer and an electron concentration of the n-type layer approximates to 1, luminous intensity of the device is improved.