The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Sep. 27, 2001
Norihiko Sekine, Kawasaki, JP;
Norihiko Sekine, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device has a structure in which a GaAs substrate and an InP substrate, different in lattice constant, are bonded to each other. An amorphous layer made of constituent atoms of the GaAs and InP substrates is formed at the interface between the GaAs and InP substrates. Forming the amorphous layer makes it possible to prevent a reduction of light-emitting efficiency caused by a thermal stress at the interface, even when a light-emitting layer by laser oscillation is formed near the interface. Besides, a linear current-voltage characteristic can be obtained at the interface.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile