The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2005

Filed:

Mar. 07, 2003
Applicants:

Chae Gee Sung, Miyagi-ken, JP;

JO Gyoo Chul, Miyagi-ken, JP;

Makoto Sasaki, Miyagi-ken, JP;

Kazuyuki Arai, Miyagi-ken, JP;

Inventors:

Chae Gee Sung, Miyagi-ken, JP;

Jo Gyoo Chul, Miyagi-ken, JP;

Makoto Sasaki, Miyagi-ken, JP;

Kazuyuki Arai, Miyagi-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/12 ;
U.S. Cl.
CPC ...
Abstract

A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.


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