The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Mar. 30, 2001
Prashant B. Phatak, Sunnyvale, CA (US);
Frederick G. Eisenmann, Iii, Hudson, WI (US);
Michal Fastow, Cupertino, CA (US);
Prashant B. Phatak, Sunnyvale, CA (US);
Frederick G. Eisenmann, III, Hudson, WI (US);
Michal Fastow, Cupertino, CA (US);
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
A method of forming an essentially uniform doped insulating layer is disclosed. Variations in a substrate temperature that may result in a dopant gradient within a doped insulating layer can be compensated for by varying a dopant supply rate in a deposition process. One particular embodiment discloses a method of forming a high density plasma phosphosilicate glass having a phosphorous concentration of 8% or greater by weight that varies by no more than about 1% by weight throughout.