The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6852643 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 08, 2005

Filed:

Sep. 30, 2003
Applicants:

Jing-chie Lin, Jung-Li, TW;

Chih-chang Tsai, Jung-Li, TW;

Chien-ming Lai, Jung-Li, TW;

Wen-chu Hsiao, Jung-Li, TW;

Inventors:

Jing-Chie Lin, Jung-Li, TW;

Chih-Chang Tsai, Jung-Li, TW;

Chien-Ming Lai, Jung-Li, TW;

Wen-Chu Hsiao, Jung-Li, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/302 ;
U.S. Cl.
CPC ...
Abstract

A method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon wafer, comprising steps of: placing a wafer after the pre-etching process into an alcohol solution for activating the surface of wafer and into an ammonium fluoride solution as an etching solution; and illuminating the back of wafer with a halogen light and performing a photoelectrochemical etching process in a potentiostatic.


Find Patent Forward Citations

Lin, Jing-Chie. (2005). Method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon wafer (U.S. Patent No. 6852643). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6852643

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