The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Sep. 30, 2003
Applicants:
Jing-chie Lin, Jung-Li, TW;
Chih-chang Tsai, Jung-Li, TW;
Chien-ming Lai, Jung-Li, TW;
Wen-chu Hsiao, Jung-Li, TW;
Inventors:
Jing-Chie Lin, Jung-Li, TW;
Chih-Chang Tsai, Jung-Li, TW;
Chien-Ming Lai, Jung-Li, TW;
Wen-Chu Hsiao, Jung-Li, TW;
Assignee:
National Central University, Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/302 ;
U.S. Cl.
CPC ...
Abstract
A method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon wafer, comprising steps of: placing a wafer after the pre-etching process into an alcohol solution for activating the surface of wafer and into an ammonium fluoride solution as an etching solution; and illuminating the back of wafer with a halogen light and performing a photoelectrochemical etching process in a potentiostatic.