The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Jan. 15, 2002
Applicants:
Tsai-yu Huang, Hsinchu Hsien, TW;
Raymond Wang, Taipei, TW;
Sheng-chuan Su, Hsinchu, TW;
Inventors:
Assignee:
Nanya Technology Corporation, Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/302 ;
U.S. Cl.
CPC ...
Abstract
A method of etching a mask layer as a protecting layer for metal contact windows uses a victim layer with slopes to avoid undercutting. First, a mask layer is formed on a semiconductor substrate. Next, a photoresist with patterns is formed on the surface of the mask layer. Next, a victim layer is formed on the surface of the photoresist according to the photoresist topography, such that a plurality of slopes is formed on the sidewalls of the photoresist. The photoresist and the victim layer with slopes are used as the etching mask to etch the mask layer to form patterns.