The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Aug. 19, 2003
Applicant:
Taiji Noda, Osaka, JP;
Inventor:
Taiji Noda, Osaka, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/425 ; H01L031/0376 ; H01L029/76 ; H01L031/94 ; H01L031/119 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a gate electrode formed on a semiconductor region via a gate insulative film and an extension high concentration diffusion layer of a first conductivity type formed in the semiconductor region beside the gate electrode. A dislocation loop defect layer is formed in a region of the semiconductor region beside the gate electrode and at a position shallower than an implantation projected range of the extension high concentration diffusion layer.