The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Jun. 30, 2004
Applicants:
Zhiyi Yu, Gilbert, AZ (US);
Jay A. Curless, Phoenix, AZ (US);
Yong Liang, Gilbert, AZ (US);
Inventors:
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/8242 ;
U.S. Cl.
CPC ...
Abstract
Methods are provided for fabricating semiconductor structures and semiconductor device structures utilizing epitaxial HfSilayers. A process in accordance with one embodiment of the invention begins by disposing a silicon substrate in a processing chamber. The pressure within the processing chamber and a temperature of the silicon substrate in the range of approximately 250° C. to approximately 700° C. is established. A layer of HfSithen is grown overlying the silicon substrate at a rate in the range of about one (1) to about five (5) monolayers per minute.