The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Jul. 10, 2003
Applicant:
Lixin Zhao, Fremont, CA (US);
Inventor:
Lixin Zhao, Fremont, CA (US);
Assignee:
Galaxcore, Inc., Cayman Islands, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/00 ; H01L021/8238 ;
U.S. Cl.
CPC ...
Abstract
An image sensor element includes a vertical overflow drain structure to eliminate substrate charge diffusion causing CMOS image sensor noise. An extra chemical mechanical polish step used to shorten the micro-lens to silicon surface distance in order to reduce optical cross talking. One embodiment uses N type substrate material with P− epitaxial layer to form a vertical overflow drain. Deep P well implantation is introduced to the standard CMOS process to prevent latch-up between an N well to an N type substrate. A photo diode is realized by stacked N well/Deep N well and stacked P well/Deep P well to improve performance.