The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Apr. 14, 2000
Lucimara Stolz Roman, Linköping, SE;
Olle Inganäs, Linköping, SE;
Olle Hagel, Linköping, SE;
Johan Carlsson, Linköping, SE;
Göran Gustafsson, Linköping, SE;
Magnus Berggren, Vreta Kloster, SE;
Lucimara Stolz Roman, Linköping, SE;
Olle Inganäs, Linköping, SE;
Olle Hagel, Linköping, SE;
Johan Carlsson, Linköping, SE;
Göran Gustafsson, Linköping, SE;
Magnus Berggren, Vreta Kloster, SE;
Thin Film Electronics ASA, Oslo, NO;
Abstract
In a method in the fabrication of an organic thin-film semiconducting device comprising an electrode arrangement with electrodes contacting a semiconducting organic material, an anode in the electrode arrangement is made as a two-layer structure, where the first layer is a conducting or semiconducting material or a combination thereof deposited on a substrate and a second layer is a conducting polymer with a work function higher than that of the material in the first layer. A third layer consisting of semiconducting organic material and forming the active material of the device is deposited on the top of the anode, and the cathode made of a fourth layer of a metal deposited on a third layer. In a preferred embodiment a low work function metal is used in the first layer, a doped conjugated polymer such as PEDOT-PSS in the second layer, while the cathode may be formed of the same metal as used in the first layer. Use in the manufacturing of the electrode arrangement in an organic thin-film diode or in a transistor structure.