The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Jun. 18, 2002
David P. Mancini, Fountain Hills, AZ (US);
Douglas J. Resnick, Phoenix, AZ (US);
David P. Mancini, Fountain Hills, AZ (US);
Douglas J. Resnick, Phoenix, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
This invention relates to semiconductor devices, microelectronic devices, microelectromechanical devices, microfluidic devices, photonic devices, and more particularly to a multi-tiered lithographic template, a method of forming the multi-tiered lithographic template and a method for forming devices with the multi-tiered lithographic template. The multi-tiered lithographic template (') is formed having a first relief structure and a second relief structure, thereby defining a multi-tiered relief image. The template is used in the fabrication of a semiconductor device () for affecting a pattern in device () by positioning the template in close proximity to semiconductor device () having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the multi-tiered relief image present on the template. Radiation is then applied through the multi-tiered template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The multi-tiered template is then removed to complete fabrication of semiconductor device ().