The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Aug. 17, 2001
Applicants:
Yasuhito Urashima, Chiba, JP;
Mineo Okuyama, Chiba, JP;
Tetsuo Sakurai, Chiba, JP;
Hisayuki Miki, Chichibu, JP;
Inventors:
Yasuhito Urashima, Chiba, JP;
Mineo Okuyama, Chiba, JP;
Tetsuo Sakurai, Chiba, JP;
Hisayuki Miki, Chichibu, JP;
Assignee:
Showa Denko K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B025/02 ;
U.S. Cl.
CPC ...
Abstract
A method of fabricating a film of group-III nitride semiconductor crystal includes a step of using metal material to deposit particles of a group III metal on a substrate surface in an atmosphere containing no nitrogen source, a step of nitriding the particles in an atmosphere containing a nitrogen source and no metal material, and a step of growing group-III nitride semiconductor crystal on the substrate surface on which the particles have been deposited.