The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Jul. 16, 2002
Katsumasa Miki, Hirakata, JP;
Yuji Mido, Higashiosaka, JP;
Tatsuo Fujii, Osaka, JP;
Makoto Nakano, Neyagawa, JP;
Suzushi Kimura, Toyonaka, JP;
Katsumasa Miki, Hirakata, JP;
Yuji Mido, Higashiosaka, JP;
Tatsuo Fujii, Osaka, JP;
Makoto Nakano, Neyagawa, JP;
Suzushi Kimura, Toyonaka, JP;
Abstract
A method for manufacturing solid electrolytic capacitor that can be mounted direct on a semiconductor component and offers a superior high frequency characteristic. An aluminum foilis provided on one surface with a resist filmand then with a through hole. Next, an insulation filmis formed to cover the other surface of aluminum foiland to fill the first through hole, and then the resist filmis removed; and then the surface of aluminum foilis roughened to be provided with a dielectric layerthereon. A second through holeis formed in the insulation film, which is filling the first through hole. A through hole electrodeis formed in the second through hole; and then, on the surface of the dielectric layer, a solid electrolytic layerand a collector layerare formed. After an openingis provided, a first connection terminalis formed therein, and a second connection electrodeon the exposed surface of the through hole electrode