The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Jan. 11, 2001
Mitsuteru Kimura, Miyagi, JP;
Mitsuteru Kimura, Miyagi, JP;
Japan Science and Technology Agency, Saitama, JP;
Abstract
At least one forward-biased semiconductor diode having a potential barrier is used as a temperature sensor whose sensitivity can be finely adjusted. An operational amplifier circuit (A) is used to apply a bias voltage of DC or rectangular waveform to a semiconductor diode (D) having a potential barrier used as a temperature sensor. In view of the fact that the temperature sensitivity of the semiconductor diode (D) depends on the height of its potential barrier, the forward bias voltage applied from a bias circuit () directly to the semiconductor diode (D) is finely adjusted to obtain desired temperature sensitivity. The output voltage of the sensor is associated with a current, having an exponential temperature dependence, which flows in the semiconductor diode (D) with the forward bias being fixed.