The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Jun. 07, 2001
Kevin K. Lee, Cambridge, MA (US);
Desmond R. Lim, Cambridge, MA (US);
Kazumi Wada, Lexington, MA (US);
Lionel C. Kimerling, Concord, MA (US);
Kevin K. Lee, Cambridge, MA (US);
Desmond R. Lim, Cambridge, MA (US);
Kazumi Wada, Lexington, MA (US);
Lionel C. Kimerling, Concord, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A method of reducing the scattering losses that involves smoothing of the core/cladding interface and/or change of waveguide geometry in high refractive index difference waveguides. As an example, the SOI-based Si/SiOwaveguides are subjected to an oxidation reaction at high temperatures, after the waveguide patterning process. By oxidizing the rough silicon core surfaces after the patterning process, the core/cladding interfaces are smoothened, reducing the roughness scattering in waveguides.