The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Jul. 28, 2003
Lei Wang, Fort Collins, CO (US);
Lei Wang, Fort Collins, CO (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
An embodiment of the invention provides a circuit and method for improving noise tolerance in multi-threaded memory circuits. A PFET is added to the receiving input of each memory cell. The gate of the PFET is connected to the output of the memory cell and the source of the PFET is connected to the control signal of the memory cell. In the case where the dataline is charged near ground and a memory cell, with a high value, is read, and the control signal is high, noise tolerance is improved by the addition of the PFET to the memory cell. The invention does not introduce additional drive fights during writes, when the control signal is low.