The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Mar. 17, 2003
Applicant:
Eiji Maruyama, Katano, JP;
Inventor:
Eiji Maruyama, Katano, JP;
Assignee:
Sanyo Electric Co., Ltd., Moriguchi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 3100 ; H01L 31075 ; H01L 3106 ;
U.S. Cl.
CPC ...
Abstract
In a photovoltaic element obtained by forming an ITO film, that is a transparent conductive film, on a semiconductor layer composed of an n-type silicon wafer, an i-type amorphous silicon hydride layer and a p-type amorphous silicon hydride layer, the ITO film has an interface layer as an alkali diffusion prevention region on a side adjacent to the semiconductor layer, and a bulk layer layered on the interface layer. The crystallinity of the interface layer is made lower than that of the bulk layer by changing the water partial pressure when forming the interface layer and the bulk layer.