The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Feb. 06, 2004
Izumi Hirano, Kanagawa-Ken, JP;
Masato Koyama, Kanagawa-Ken, JP;
Akira Nishiyama, Kanagawa-Ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A good interface characteristic can be maintained, and a leakage current of a dielectric film can be decreased. A semiconductor device according to one aspect of the present invention includes: a semiconductor substrate; a gate dielectric film containing at least nitrogen and a metal, the gate dielectric film being formed on the semiconductor substrate, and including a first layer region contacting the semiconductor substrate, a second layer region located at a side opposite to that of the first layer region in the gate dielectric film, and a third layer region located between the first and second layer regions, a maximum value of a nitrogen concentration in the third layer region being higher than maximum values thereof in the first and second layer regions; a gate electrode contacting the second layer region; and a pair of source and drain regions formed at both sides of the gate dielectric film in the semiconductor substrate.