The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2005

Filed:

Nov. 20, 2000
Applicants:

Volker Harle, Laaber, DE;

Berthold Hahn, Hemau, DE;

Hans-jürgen Lugauer, Werzenbach, DE;

Helmut Bolay, Pettendorf, DE;

Stefan Bader, Regensburd, DE;

Dominik Eisert, Regensburg, DE;

Uwe Strauss, Bad Abbach, DE;

Johannes Völkl, Erlangen, DE;

Ulrich Zehnder, Regensburg, DE;

Alfred Lell, Maxhütte-Haidhof, DE;

Andreas Weimer, Regensburg, DE;

Inventors:

Volker Harle, Laaber, DE;

Berthold Hahn, Hemau, DE;

Hans-Jürgen Lugauer, Werzenbach, DE;

Helmut Bolay, Pettendorf, DE;

Stefan Bader, Regensburd, DE;

Dominik Eisert, Regensburg, DE;

Uwe Strauss, Bad Abbach, DE;

Johannes Völkl, Erlangen, DE;

Ulrich Zehnder, Regensburg, DE;

Alfred Lell, Maxhütte-Haidhof, DE;

Andreas Weimer, Regensburg, DE;

Assignee:

Osram GmbH, , DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 310328 ; H01L 310336 ; H01L 31072 ; H01L 31109 ; H01L 3226 ;
U.S. Cl.
CPC ...
Abstract

An optical semiconductor device with a multiple quantum well structure, is set out in which well layers and barrier layers, comprising various types of semiconductor layers, are alternately layered. The device well layers comprise a first composition based on a nitride semiconductor material with a first electron energy. The barrier layers comprise a second composition of a nitride semiconductor material with electron energy which is higher in comparison to the first electron energy. The well and barrier layers are in the direction of growth, by a radiation-active quatum well layer which with the essentially non-radiating well layers () and the barrier layers (), arranged in front, form a supperlattice.


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