The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Jun. 19, 2003
Joon Hee Kim, Kyungki-do, KR;
Kang Heon Hur, Kyungki-do, KR;
Hae Sung Park, Kyungki-do, KR;
Jong Han Kim, Kyungki-do, KR;
Woo Sup Kim, Kyungki-do, KR;
Joon Hee Kim, Kyungki-do, KR;
Kang Heon Hur, Kyungki-do, KR;
Hae Sung Park, Kyungki-do, KR;
Jong Han Kim, Kyungki-do, KR;
Woo Sup Kim, Kyungki-do, KR;
Samsung Electro-Mechanics Co., Ltd., Kyungki-do, KR;
Abstract
A low temperature sinterable dielectric ceramic composition and a multilayer ceramic chip capacitor. The dielectric ceramic composition is expressed by the general formula: aBaTiO-bMgCO-cYO-dCrO-eVO-f(xZrO-y(K,Li)O-zSiO) (x+y+z=1; 0.05≦x≦0.18, 0.01≦y≦0.08, and 0.7.4≦z≦0.93); in which a, b, c, d, e and f are molar ratios; a=100, 1.0≦b≦2.0, 0.2≦c≦2.0, 0.02≦d≦0.3, 0.02≦e≦0.3, and 0.5≦f<2. The multilayer ceramic chip capacitor is prepared using the dielectric ceramic composition. The dielectric composition according to the present invention can be sintered at a low temperature without decrease of a dielectric constant, making it possible to make ultra thin-layered dielectrics.